MosFET Switching Transistor

P-Channel

TO-220 Isolated Package

For use in High Voltage Switching Applications


Features:

– Low On-Resistance: 0.8 ohm max.(@ VGS=110V, ID=-3.0A)

– Low Ciss: 1040pF typ.

– High Avalanche Capability Ratings


Maximum Ratings:

Drain to Source Voltage: -250V

Gate to Source Voltage : +/- 30V

Drain Current (DC): +/- 6.0A

Drain Current (pulse): +/- 24A

Total Power Dissipation (Tc= 25 deg. C): 35W


Electrical Characteristics:

Gate to Source Cutoff Voltage: -4.8V (typ)

Drain Leakage Current: -100uA (max)

Input Capacitance: 1040pF (typ)

Turn-On Delay Time: 24ns (typ)

Total Gate Charge: 23.1 nC (typ

Body Diode Forward Voltage: 0.92V


Manufactured by: NEC

Part Number: 2SJ449


Full Datasheet: MOS Field Effect Transistor 6.0A 250V