NPN Silicon Transistors Epitaxial Planar


Max. Ratings (TA=25�C unless otherwise noted)

Collector to base voltage: 30V

Collector to emitter voltage: 20V

Emitter to base voltage: 5V

Collector current: 30mA

Collector power dissipation: 400mW

Junction temperature: 150�C


Electrical Characteristics (TA=25�C unless otherwise noted):

Collector to base voltage: 30V min.

(IC = 10mA, IE = 0)

Collector to emitter voltage: 20V min.

(IC = 2mA, IB = 0)

Emitter to base voltage: 5V min.

(IE = 10mA, IC = 0)

Forward current transfer ratio: 70 min. ; 250 max.

(VCE = 10V, IC = 1mA)

Transition frequency: 150MHz min ; 230MHz typ.

(VCB = 10V, IC = 1mA, f = 200MHz)

Common emitter reverse transfer capacitance: 1.3pF typ. ; 1.6Pf max.

(VCE = 10V, IC = 1mA, f = 10.7MHz)


Applications:

Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.


Manufactured by: Panasonic

Part number: 2SC829


Full datasheet: 2SC829