Description / Additional Information


High Voltage Amplifier Transistors

NPN Triple Diffused


Maximum Ratings (TA=25�C):

Collector to base voltage: 2000V

Collector to emitter voltage: 2000V

Emitter to base voltage: 6V

Collector current: 20mA

Collector peak current: 40mA

Collector power dissipation: 1.5W

Junction temperature: 150�C

Storage temperature: -55 to 150�C


Electrical Characteristics (TA=25�C):

Collector cutoff current (VCE = 2000 V, RBE = 0): 500uA max.

Emitter cutoff current (VEB = 6 V, IC = 0): 500uA max.

DC current transfer ratio (VCE = 5 V, IC = 1 mA): 10 min.

Collector to emitter saturation voltage: 5.0V max.

– (IC = 10 mA, IB = 2 mA)


Manufactured by: Hitachi

Part Number: 2SC4913


Full Datasheet: 2SC4913