High Voltage BJT Transistors

OBSOLETE


Polarity: NPN

Configuration: Single


Collector-Emitter Voltage: 1.2kV

Collector-Base Voltage: 1.5kV

Emitter-Base Voltage: 5.0V

Continuous Collector Current: 50mA

Maximum DC Collector Current: 100mA

Power Dissipation: 10.0W

Gain Bandwidth Product: 5.5MHz

Junction Temperature: 150°C


Manufactured by: Toshiba®

Part Number: 2SC4686A


Full Datasheet: Toshiba® NPN Transistor 1200V