NPN Epitaxial Planar Transistors

OBSOLETE

NOTE: Parts are silver so they may be a little tarnished


Features:

– High Power Gain: Gpe >/= 13.8dB @ VCC=13.5V, PO=6W, f=175 MHz

– Emitter Ballasted Construction and Gold Metallization for High Reliability and Good Performance

– Low Thermal Resistance Ceramic Package with Flange


Applications: 4 to 5 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications


Maximum Ratings:

Collector to Base Voltage: 35.0V

Emitter to Base Voltage: 4.0V

Collector to Emitter Voltage: 17.0V

Collector Current: 2.0A

Collector Dissipation @ TA=25 deg. C: 2.0W

Junction Temperature: 175 deg. C

Thermal Resistance (Junction to Ambient): 75 deg. C/W


Manufactured by: Mitsubishi

Part Number: 2SC2237-22


Full Datasheet: NPN Silicon RF Power Transistor 2SC2237-22