PNP Amplifier & Oscillator Transistors

Complements 2N5223


Maximum Ratings

Collector-Base Voltage: -30V

Collector-Emitter Voltage: -30V

Emitter-Base Voltage: -3.0V

Collector Current: 50mA

Power Dissipation @ 25 deg. C

– Ambient Temperature: 0.625W

– Case Temperature: 1.0W


Additional Electrical Characteristics:

Emitter Cutoff Current: 500nA (max)

Collector Cutoff Current: 100nA (max)

DC Current Gain: 700 (max)

Collector to Base Capacitance: 5.0pF (max)

Small signal Current Gain: 1500 (max)

Operating Temperature: 150 degrees C


Manufactured by: National Semiconductor

Part Number: 2N5227


Full Datasheet: Bi-Polar Junction Transistor National Semi 2N5227


RoHS Compliant